Engineering Physics Annotation << Back Electrical Fluctuations in Semiconductors Caused by Defects. Fluctuation Spectra Yakubovich B.I. Electrical fluctuations in semiconductors caused by capture and emission of charge carriers by traps formed by structural defects are studied. Stochastic processes of carrier capture and emission by traps are cause of several types of electrical noises. The noise caused by this mechanism largely limits characteristics of semiconductor devices and reduces their quality. For these reasons, the study of such fluctuations in semiconductors is of fundamental and practical importance. The article widely considers electrical fluctuations in semiconductors caused by capture and emission of charge carriers by traps formed by structural defects. Fluctuations in statistically related processes of carrier capture and emission on different traps are analyzed. Fluctuations in independent processes of carrier capture and emission on different traps are analyzed. Fluctuation spectra are calculated. Fluctuation processes causing electrical noise are considered in a very general form. As a result, a rigorous and broad description of electrical fluctuations in semiconductors caused by capture and emission of charge carriers by traps is given. It is valid for various types of semiconductors and for various types of traps. The results of the article have practical significance: they can be used to reduce noise, improve quality and increase reliability of semiconductor devices. Keywords: fluctuations, noise, electrical, semiconductors, semiconductor devices, spectrum, stochastic. DOI: 10.25791/infizik.2.2026.1536 Pp. 38-46.