Engineering Physics Annotation << Back ELECTRIC AND UVPHOTOCONDUCTIVITY PROPERTIES OF SURFACE-BARRIER STRUCTURES ON THE THIN FILMS OF Ag/ZnO BASIS A.E. MUSLIMOV, А.М. ISMAILOV, V.A. BABAEV, V.M. KANEVSKY The thickness dependence of electric and UV-photoconductivity density of surface-barrier structures on the thin films of Ag/ZnO basis (the ZnO thickness less 78 nm i more than 1 μm) and conditions of substrate (the rhombohedral plane of sapphire) dependence are investigated. Volt-ampere characteristic of structures on the basis of Ag/ZnO at ZnO thickness ≤ 78 nm is linearity and symmetry, irrespective of a condition of a substrate surface. At increase in thickness of ZnO mo than 1 μm structures of Ag/ZnO showed the straightening properties, however the nature of volt-ampere characteristics depended on morphology and structural perfection of films of ZnO. UV-sensing and contrast of current of samples were in an interval 0.6...3.3 h is 10-4 A/W and 1.27...15, respectively. Key words: atomic force microscopy, sapphire, surface, epitaxy, diffraction. DOI: 10.25791/infizik.08.2019.809 Contacts: - Pp. 21-26.