Engineering Physics Annotation << Back INFLUENCE OF SURFACE NON-STOCHEMOMETRIC PHASES FOR SYNTHESIS OF ZNO-BASED LAYERS A.Kh. ABDUEV, A.K. AKHMEDOV, A.SH. ASVAROV The growth processes of Ga doped ZnO layers by magnetron sputtering at various partial pressures of oxygen and zinc vapor near the growth surface has been studied. It is shown that an improvement in the crystallinity of the ZnO-based layers is observed at synthesis temperatures above 200 °C due to an increase in the mobility of the deposited atoms on the growth surface, which in turn is due to thermal desorption of oxygen. At synthesis temperatures of 350…450 °C, close to the Zn desorption temperature, the growth of the ZnO layers proceeds with the participation of a surface non-stoichiometric low-melting phase, which ensures the growth of layers under quasi-equilibrium conditions. Key words: Zinc oxide, magnetron sputtering, stoichiometry, microstructure. Contacts: E-mail: cht-if-ran@mail.ru Pp. 094-100.