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Engineering Physics

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STUDY OF METAL COATINGS SILICON SURFACE
I.G. PASHAYEV

It is reserched possibility of receipt of multi-layered metallization of Al-NiTi-Pd on the
surface of single-crystal silicon n-tipe. It is shown that because of distinction for coeffi -
cients of thermal expansion, parameters of silicon lattice and material of the presi-pitable
layer of tape can have a different degree of imperfectness. The role of thermoburning
is set in forming of border of division Al-NiTi-PdSi/n-Si. On the basis of the got multilayered structures the Schottky diodes are made and their descriptions are studied. Possibility of removal of technological operation on creation of diffusive barrier Ni-Ti, in the case of high-quality contact of PdSi with n-Si is educed.
Key words: tape of alloy, microstructure, cracks, border of division, Schottky barrier.

Contacts: E-mail: islampashayev@rambler.ru

Pp. 48-54.

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