Engineering Physics Annotation << Back Numerical analysis of oxidation influence of aluminium metallization on characteristics the integrated circuit G.V. Kuznetsov, G.Y. Mamontov, A.V. Titov Computer simulation of metallization oxidation process was made in the integrated circuit. Reaction of oxidation of aluminum metallization with water steam was considered. The thermal-conductivity equation and diffusion equation of oxidizer in oxide layer of metal are solved. The influence scale of oxidation process on characteristics of the integrated circuit is shown. Keywords: Reliability of radio electronics, the semi-conductor device, the transistor, failure rate, metal conductor, metal oxidation, oxide film, resistance of a conductor, thermal fields, the heat conductivity equation. E-mail: avtitov@sibmail.com