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Engineering Physics

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Prospects for Application of Electrical Low-Frequency Noise for Non-Destructive Testing of Semiconductor Devices
Yakubovich B.I.

Possibilities and prospects for using low-frequency electrical noise in non-destructive testing of semiconductor
devices are considered. Low-frequency electrical noise in semiconductors and electronic devices based on them
is typically determined by excess low-frequency noise dominating in low-frequency region. It is shown that excess
noise associated with structural defects contains information about both the degree and rate of degradation of
semiconductor devices. Assessing degree of degradation provides information about quality deficiencies of the
manufactured device. Assessing degradation rate provides information about quality deficiencies of the device
that arise during its operation. It is noted that degradation rate is a key characteristic determining duration of
failure-free operation of the device. A method for determining degradation rate by measuring excess noise of
semiconductor devices is proposed. The results demonstrate possibility of obtaining information about degree
and rate of degradation of semiconductor devices by measuring the spectral characteristics of excess noise.
The resulting set of information on degree and rate of degradation allows for a highly effective assessment
of performance of semiconductor devices over a long period of operation. It is demonstrated that use of lowfrequency electrical noise offers potential to significantly improve non-destructive testing of semiconductorbased electronic devices. It is substantiated that use of low-frequency electrical noise for non-destructive
testing is a promising approach to improving quality and reliability of semiconductor devices.
Keywords: noise, fluctuations, electrical, semiconductor devices, non-destructive testing, reliability.


DOI: 10.25791/infizik.7.2026.1569

Pp. 52-58.

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