Engineering Physics Annotation << Back ELTCTRICAL FLUCTUATIONS AND DOUBLY-CHARGED TRAPS IN SEMICONDUCTORS B.I. YAKUBOVICH Electrical fl uctuations in semiconductors caused by capture and emission of charge carriers by doublycharged traps formed by structural defects are considered. Electric fluctuations in semiconductors caused by doubly-charged traps are analyzed and their quantitative description is given. A general form expression is calculated for spectrum of fluctuations. It describes fluctuations caused by doubly-charged traps formed by structural defects of various types and is applicable to various types of semiconductors. The results obtained develop concept of electrical fluctuations in semiconductors associated with defects and allow to give a more complete description of electrical noises caused by traps. They can be used to analyze fluctuations in semiconductors and to determine spectral characteristics of fl uctuations. For applied purposes, the results obtained can be used to reduce noise of semiconductor devices and improve quality of their operation and for non-destructive testing and predicting reliability of semiconductor devices. Keywords: bipolar transistor, compound Darlington transistor, class AB power amplifier, push-pull power amplifier, amplitude-frequency characteristic, phase-frequency characteristic, damping coefficient. DOI: 10.25791/infizik.12.2022.1304 Pp. 33-38.