Engineering Physics Annotation << Back INVESTIGATION OF TECHNOLOGICAL DEFECTS IN OXIDE CRYSTALS OF RARE EARTH COMPOUNDSINVESTIGATION OF TECHNOLOGICAL DEFECTS IN OXIDE CRYSTALS OF RARE EARTH COMPOUNDS V.A. ANTONOV The results of studies of technological defects based on F-centers in oxide single crystals of various rare-earth compounds are presented: Y2Ti2O7, Gd2Ti2O7, LiGdO2, YAlO3, YSCO3. Absorption spectra before and after radiation exposure by gamma radiation have been studied. Concentrations of technological defects based on F-centers are calculated. The values of the refractive index and the edge of intrinsic absorption in the UV region of the spectrum are determined. Keywords: single crystals, F-centers, absorption spectra, concentrations. DOI: 10.25791/infizik.9.2022.1284 Pp. 13-17.