Engineering Physics Annotation << Back COMPUTER DESIGN OF P, B AND AS NANODOMAINS IN SI WAFER RELIEF G.A. TARNAVSKY Computer simulation of nanotechnology of doping (by ion implantation method) in nanocolumns of silicon wafer relief is conducted. The effect of basic process parameters (implantation energy and implant type) on position and configuration of phosphorus, boron and arsenic doping-domains is investigated. Keywords: Nanotechnologies, computer simulation, implantation, doping impurities, silicon. E-mail: Gennady.Tarnavsky@gmail.com