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Engineering Physics

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STUDYING RECOVERY DEGRADATIONS PROPERTIES OF CONTACT PIECE OF SILICON MADE OF AN AMORPHOUS METAL ALLOY
I.G. PASHAEV

In the given activity recovery degradations properties αNiTi-nSi diodes Shottki (DSH) by a thermoannealing, and also upset by an irradiation -quanta of properties αNiTi-nSi solar cells (SE), made on technology (DSH), ultrasonic processing (UP) is studied. Used metal the layer had amorphous structure. It is revealed that recovery degradetion properties αNiTi-nSi in DSH is connected with change of structure of an amorphous alloy αNiTi, the milestone of process of an annealing «cures» the damaged diodes. The experimental results proving a capability of recovery and steering in parametres silicon SE by means of UP are simultaneously considered. Recovery of the initial electrophysical and photo-electric properties SE upset  by an irradiation, by means of UP is connected with a regrouping and athermic an annealing of the radiation defects formed γ-quanta. Key words: ultrasonic processing, amorphous metals, diodes Shottki, superfluous currents, degradations, ultrasonic effect, photosensitivity, silicon solar cells.

Contacts: E-mail: islampashayev@rambler.ru

Pp. 23-26.

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