Engineering Physics Annotation << Back INVESTIGATION OF THE RECOVERY OF CHARACTERISTICS OF SCHOTTKY SILICON DIODES AND SOLAR CELLS I.G. PASHAYEV This paper is devoted to the study of recovery characteristics AuTi-nSi Schottky diodes (ShD), subjected to -irradiation or local disruption of the interface structure with a diamond indenter. Reduction of excess diode current was achieved both with thermal annealing and ultrasonic irradiation. Parallel trial assessed the solar cells made from these ShD exposed to -radiation and single -or two-time ultrasonic irradiation. It was shown that after exposure to diamond indenter excess diode current is reduced by thermal annealing, but the reduction of the excess current to the original value is not achieved. The parameters of the photovoltaic solar cells (SC) before irradiation, after  irradiation and a single or double ultrasonic irradiation show that the ultrasonic treatment is more effective than thermal annealing. Keywords: restoration of characteristics, restored enie, interface, Schottky diodes, ultrasound exposure, photosensitivity, silicon solar cells. Contacts: E-mail: pashayev1957@mail.ru Pp. 08-13.