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Engineering Physics
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THE INFLUENCE OF SELENIZATION TEMPERATURE ON STRUCTURAL PROPERTIES OF TWO-STEP «CONTROLLED SELENIZATION» CUIN0,95GA0,05SE2 THIN FILMS OF DIFFERENT THICKNESS |
Т.М. GADJIEV, М.А. ALIEV, A.SH. ASVAROV, R.M. GADJIEVA, A.M. ASKHABOV, A.M. ISMAILOV
A technology for obtaining CuIn0,95Ga0,05Se2 thin fi lms by two-stage selenization method in gas-carrier fl ow (nitrogen) of the reaction component (selenium) is reported. The composition and structure of the fi lms are studied by means of electron beam microscopy and X-ray analysis. A dependence of the structural parameters form the selenization temperature is shown.
Key words: photocells, technology, thin film, selenization, structure, composition, crystallite, grain boundary, refl ex.
Contacts: E-mail: aliev_marat@mail.ru
Pp. 071-077. |
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