Engineering Physics Annotation << Back INFLUENCE OF STRUCTURE AND METAL STRUCTURE ON ELECTROPHYSICAL PROPERTIES OF SILICON DIODES OF SHOTTKA I.G. Pashaev, E.S. Garaev, M.S. Nazarov, I.А. Abuzerov In the given activity obtaining AuxTi100-x -nSi (where х= is investigated; 0; 14;30;38; 60; 80; 100) diodes Shottki electrophysical properties of the silicon diodes Shottki containing metal films of various structure also are studied. In рентгенофазовом system Au-Ti analysis it is established, that the film of alloy Au38Ti62 has amorphous structure, and other films - polycrystalline. Key parametres of diodes Shottki depending on structure and structure of films of metal are defined. It is as a result revealed, that electrophysical properties AuxTi100-x x-nSi of diodes Shottki are connected with change of structure and structure of films of metal. These results suggest that the composition of Au38Ti62 sample is amorphous. This combination diodes Shottki represents the greatest barrier height and the lowest coefficient of coupling compared to polycrystalline metal film. Key words: structure and structures of amorphous metals, diodes Shottki, an alloy film, barrier height, non-uniform model, microstructures. Pp. 23-26.